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The next-generation Intel® Solid-State Drive (Intel® SSD) 320 Series offers better performance, built-in data protection features, larger capacities and more value for your money. Created with 25-nanometer Intel® NAND Flash Memory, the Intel® SSD 320 Series accelerates PC responsiveness. With sequential read performance of up to 270 megabytes per second (MB/s), your PC will handle demanding applications and multitasking needs.
Great for consumers, corporate IT or PC enthusiasts, the Intel® SSD 320 Series offers a substantial performance boost over conventional mechanical hard disk drives.
Data protection features
The Intel® SSD 320 Series helps protect your data from external threats and internal system issues with pre-configured Advanced Encryption Standard,1 keeping your personal data more secure. To reduce potential data loss, the Intel® SSD 320 Series also detects and protects from unexpected system power loss by saving all cached data in the process of being written before shutting down. The Intel® SSD 320 Series also offers an array of surplus NAND flash memory should the controller encounter a faulty NAND array—the drive automatically reconfigures itself to reduce potential data loss.
Flexibility to meet your needs
Available in two form factors (1.8 and 2.5 inch) and a wide range of capacities, the Intel® SSD 320 Series provides you with the flexibility to choose an SSD that best fits your needs and budget. Whether you choose the 40GB, 80GB, 120GB, 160GB, 300GB, or 600GB capacity, the Intel® SSD 320 Series delivers the highly responsive PC experience you need.
Specifications
Essentials | |
Status
|
Launched |
Launch Date
|
Q1'11 |
Sequential Read
|
270 MB/s |
Sequential Write
|
90 MB/s |
Random Read (8GB Span)
|
38000 IOPS |
Random Read (100% Span)
|
38000 IOPS |
Random Write (8GB Span)
|
10000 IOPS |
Random Write (100% Span)
|
300 IOPS |
Latency - Read
|
75 µs |
Latency - Write
|
90 µs |
Power - Active
|
150 mw (MobileMark 2007 Workload), 2.5 W (64K Sequential Write) |
Power - Idle
|
100 mw (DIPM), .7 W (Non-DIPM) |
Vibration - Operating
|
2.17 GRMS(5-700 Hz) |
Vibration - Non-Operating
|
3.13 GRMS(5-800 Hz) |
Shock (Operating and Non-Operating)
|
1,500 G/.5 msec |
Operating Temperature
|
0 - 70 C |
Weight
|
up to 88 ± 2 grams |
Mean Time Between Failures (MTBF)
|
1,200,000 Hours |
Uncorrectable Bit Error Rate (UBER)
|
1 sector per 1016 |
Package Specifications | |
Components
|
Intel NAND Flash Memory Multi-Level Cell (MLC) Technology |
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